MDF11N65B N-channel MOSFET 650V
MDF11N65B
N-Channel MOSFET 650V, 12A, 0.65Ω
General Description
These N-channel MOSFET...
MDF11N65B N-channel
MOSFET 650V
MDF11N65B
N-Channel
MOSFET 650V, 12A, 0.65Ω
General Description
These N-channel
MOSFET are produced using advanced MagnaChip’s
MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality.
These devices are suitable device for SMPS, high Speed switching and general purpose applications.
Features
VDS = 650V ID = 12A RDS(ON) ≤ 0.65Ω
@ VGS = 10V @ VGS = 10V
Applications
Power Supply PFC High Current, High Speed Switching
D
TO-220F MDF Series
G
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source
Voltage Gate-Source
Voltage
Characteristics
Continuous Drain Current Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range * Id limited by maximum junction temperature
TC=25oC TC=100oC
TC=25oC Derate above 25 oC
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1)
Aug 2011 Version 1.1
1
Symbol VDSS VGSS ID IDM PD EAR dv/dt EAS TJ, Tstg
Symbol RθJA RθJC
S
Rating 650 ±30 12* 7.7* 48* 49.6 0.4 18.1 4.5 750
-55~150
Unit V V A A A W
W/oC mJ V/ns mJ oC
Rating 62.5 2.52
Unit oC/W
MagnaChip Semiconductor Ltd.
MDF11N65B N-channel
MOSFET 650V
Ordering Information
Part Number MDF11N65BTH
Temp. Range -55~150oC
Package TO-220F
Packing Tube
RoHS Status Halogen Free
Electrical Characteristics (Ta =25oC)
Charac...