MDP15N60G / MDF15N60G N-Channel MOSFET 600V
MDP15N60G / MDF15N60G
N-Channel MOSFET 600V, 15A, 0.40Ω
General Descriptio...
MDP15N60G / MDF15N60G N-Channel
MOSFET 600V
MDP15N60G / MDF15N60G
N-Channel
MOSFET 600V, 15A, 0.40Ω
General Description
These N-channel
MOSFET are produced using advanced Magnachip’s
MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality.
These devices are suitable device for SMPS, high Speed switching and general purpose applications.
Features
VDS = 600V ID = 15A RDS(ON) ≤ 0.40Ω
@ VGS = 10V @ VGS = 10V
Applications
Power Supply PFC High Current, High Speed Switching
D
G
GDS
TO-220 MDP Series
G DS
TO-220F MDF Series
S
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source
Voltage Gate-Source
Voltage
Characteristics
Continuous Drain Current
Pulsed Drain Current(2)
Power Dissipation
Repetitive Avalanche Energy(2) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range * Id limited by maximum junction temperature
TC=25oC TC=100oC
TC=25oC Derate above 25 oC
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1)
Aug. 2021 Version 1.2
1
Symbol VDSS VGSS
ID
IDM
PD
EAR dv/dt EAS TJ, Tstg
MDP15N60G MDF15N60G
600
±30
15
15*
9.5
9.5*
60
60*
231.4
36.7
1.85
0.29
23.1
4.5
511
-55~150
Unit V V A A A W
W/ oC mJ V/ns mJ oC
Symbol RθJA RθJC
MDP15N60G 62.5 0.54
MDF15N60G 62.5 3.4
Unit oC/W
Magnachip Semiconductor Ltd.
MDP15N60G / MDF15N60G N-Channel
MOSFET 600V
Ordering Inform...