MDF18N50B

MDP1850B / MDF18N50B N-channel MOSFET 500V MDP18N50B / MDF18N50B N-Channel MOSFET 500V, 18.0 A, 0.27Ω General Description The MDP/F18N50B uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDP/F18N50B is suitable device for SMPS, HID and general purpose applications. Features  VDS = 500V  ID = 18.0A  RDS(ON) ≤ 0.27Ω @VGS = 10V @VGS = 10V Applications  Power Supply  PFC  Ballast G D S TO-220 MDP Series GD S TO-220F MDF Series Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range ※ Id limited by maximum junction temperature TC=25oC TC=100oC TC=25oC Derate above 25 oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) Aug.2021.Version1.1 11 Symbol VDSS VGSS ID IDM PD EAR dv/dt EAS TJ, Tstg MDP18N50B MDF18N50B 500 ±30 18 18* 11 11* 72 72* 236 37 1.89 0.29 23.6 4.5 950 -55~150 Unit V V A A A W W/ oC mJ V/ns mJ oC Symbol RθJA RθJC MDP18N50B MDF18N50B 62.5 62.5 0.53 3.4 Unit oC/W Magnachip Semiconductor Ltd. MDP1850B / MDF18N50B N-channel MOSFET 500V Ordering Information Part Number MDP18N50BTH MDF18N50BTH Marking MDP18N50B MDF18N50B Temp....