MDF18N50 N-channel MOSFET 500V
MDF18N50
N-Channel MOSFET 500V, 18 A, 0.27Ω
General Description
The MDF18N50 uses advanc...
MDF18N50 N-channel
MOSFET 500V
MDF18N50
N-Channel
MOSFET 500V, 18 A, 0.27Ω
General Description
The MDF18N50 uses advanced MagnaChip’s
MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF18N50 is suitable device for SMPS, high speed switching and general purpose applications.
Features
VDS = 500V VDS = 550V ID = 18A RDS(ON) ≤ 0.27Ω @ Tjmax @VGS = 10V @VGS = 10V
Applications
Power Supply PFC High Current, High Speed Switching
D
G
G
D
S
S
Absolute Maximum Ratings (Ta = 25oC)
Characteristics Drain-Source
Voltage Drain-Source
Voltage @ Tjmax Gate-Source
Voltage Continuous Drain Current (※) Pulsed Drain Current(1) Power Dissipation Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range ※ Id limited by maximum junction temperature TC=25 C Derate above 25 C
o o
Symbol VDSS VDSS @ Tjmax VGSS TC=25 C TC=100 C IDM PD Dv/dt EAS TJ, Tstg
o o
Rating 500 550 ±30 18 11 72 37 0.29 4.5 950 -55~150
Unit V V V A A A W W/ oC V/ns mJ
o
ID
C
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(1) (1)
Symbol RθJA RθJC
Rating 62.5 3.4
Unit
o
C/W
Dec 2009. Version 1.4
1
MagnaChip Semiconductor Ltd.
MDF18N50 N-channel
MOSFET 500V
Ordering Information
Part Number MDF18N50TH Temp. Range -55~150oC Package TO-220F Packing Tube RoHS Status Halogen Free
Electrical Characteristics (Ta =25oC)
Characteristics Static Cha...