MDF4N60D

MDF4N60D N-channel MOSFET 600V MDF4N60D N-Channel MOSFET 600V, 4.0A, 2.2Ω General Description These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Features VDS = 600V ID = 4.0A RDS(ON) ≤ 2.2Ω @ VGS = 10V @ VGS = 10V Applications Power Supply PFC High Current, High Speed Switching D TO-220F MDF Series G Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range * Id limited by maximum junction temperature TC=25oC TC=100oC TC=25oC Derate above 25 oC Symbol VDSS VGSS ID IDM PD EAR dv/dt EAS TJ, Tstg Thermal Characteristics...