MDF5N50

MDF5N50 N-channel MOSFET 500V MDF5N50 N-Channel MOSFET 500V, 5.0 A, 1.4Ω General Description The MDF5N50 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF5N50 is suitable device for SMPS, high Speed switching and general purpose applications. Features  VDS = 500V  ID = 5.0A  RDS(ON) ≤ 1.4Ω Applications  Power Supply  PFC  Ballast @ VGS = 10V @ VGS = 10V G DS Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (※) Pulsed Drain Current(1) Power Dissipation Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range ※ Id limited by maximum junction temperature Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) TC=25oC TC=100oC TC=25oC Derate above 25 oC Symbol VDSS VGSS ID IDM PD Dv/dt EAS TJ, Tstg Rating 500 ±30 5.0 3.2 20 27 0.22 4.5 230 -55~150 Unit V V A A A W W/ oC V/ns mJ oC Symbol RθJA RθJC Rating 62.5 4.6 Unit oC/W Jan. 2021. Version 1.4 1 Magnachip Semiconductor Ltd. MDF5N50 N-channel MOSFET 500V Ordering Information Part Number MDF5N50TH Temp. Range -55~150oC Package TO-220F Packing Tube RoHS Status Halogen Free Electrical Characteristics (Ta =25oC) Characteristics Symbol Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Drain Cut-Off Current Ga...