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MDF5N50B Datasheet

Part Number MDF5N50B
Manufacturers MagnaChip
Logo MagnaChip
Description N-Channel MOSFET
Datasheet MDF5N50B DatasheetMDF5N50B Datasheet (PDF)

MDP5N50B / MDF5N50B N-channel MOSFET 500V MDP5N50B / MDF5N50B N-Channel MOSFET 500V, 5.0 A, 1.4Ω General Description The MDP/F5N50B uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDP/F5N50B is suitable device for SMPS, HID and general purpose applications. Features VDS = 500V ID = 5.0A RDS(ON) ≤ 1.4Ω @VGS = 10V @VGS = 10V Applications Power Supply PFC Ballast Absolute Maximum Ratings (Ta = 25oC) Drain-.

  MDF5N50B   MDF5N50B






Part Number MDF5N50Z
Manufacturers MagnaChip
Logo MagnaChip
Description N-Channel MOSFET
Datasheet MDF5N50B DatasheetMDF5N50Z Datasheet (PDF)

MDP5N50Z / MDF5N50Z N-channel MOSFET 500V MDP5N50Z / MDF5N50Z N-Channel MOSFET 500V, 5A, 1.4Ω General Description These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Features VDS = 500V ID = 5.0A RDS(ON) ≤ 1.4Ω @ VGS = 10V @ VGS = 10V Applications Power Supply PFC High Current.

  MDF5N50B   MDF5N50B







Part Number MDF5N50FB
Manufacturers MagnaChip
Logo MagnaChip
Description N-Channel MOSFET
Datasheet MDF5N50B DatasheetMDF5N50FB Datasheet (PDF)

MDF5N50FB N-channel MOSFET 500V MDF5N50FB N-Channel MOSFET 500V, 4.5 A, 1.55Ω General Description The MDF5N50FB uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF5N50FB is suitable device for SMPS, high Speed switching and general purpose applications. Features VDS = 500V ID = 4.5A RDS(ON) ≤ 1.55Ω @ VGS = 10V @ VGS = 10V Applications Power Supply PFC Ballast G DS Absolute Maximum Ratings (Ta = 25oC) Ch.

  MDF5N50B   MDF5N50B







Part Number MDF5N50F
Manufacturers MagnaChip
Logo MagnaChip
Description N-Channel MOSFET
Datasheet MDF5N50B DatasheetMDF5N50F Datasheet (PDF)

MDP5N50F / MDF5N50F N-channel MOSFET 500V MDP5N50F / MDF5N50F N-Channel MOSFET 500V, 4.5 A, 1.55Ω General Description The MDP5N50F/MDF5N50F use advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDP5N50F/MDF5N50F are suitable device for SMPS, HID and general purpose applications. Features VDS = 500V ID = 4.5A RDS(ON) ≤ 1.55Ω @VGS = 10V @VGS = 10V Applications Power Supply PFC Ballast D G TO-220 MDP Series TO-22.

  MDF5N50B   MDF5N50B







Part Number MDF5N50
Manufacturers MagnaChip
Logo MagnaChip
Description N-Channel MOSFET
Datasheet MDF5N50B DatasheetMDF5N50 Datasheet (PDF)

MDF5N50 N-channel MOSFET 500V MDF5N50 N-Channel MOSFET 500V, 5.0 A, 1.4Ω General Description The MDF5N50 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF5N50 is suitable device for SMPS, high Speed switching and general purpose applications. Features  VDS = 500V  ID = 5.0A  RDS(ON) ≤ 1.4Ω Applications  Power Supply  PFC  Ballast @ VGS = 10V @ VGS = 10V G DS Absolute Maximum Ratings (Ta = 25oC) C.

  MDF5N50B   MDF5N50B







N-Channel MOSFET

MDP5N50B / MDF5N50B N-channel MOSFET 500V MDP5N50B / MDF5N50B N-Channel MOSFET 500V, 5.0 A, 1.4Ω General Description The MDP/F5N50B uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDP/F5N50B is suitable device for SMPS, HID and general purpose applications. Features VDS = 500V ID = 5.0A RDS(ON) ≤ 1.4Ω @VGS = 10V @VGS = 10V Applications Power Supply PFC Ballast Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range ※ Id limited by maximum junction temperature TC=25oC TC=100oC TC=25oC Derate above 25 oC Symbol VDSS VGSS ID IDM PD EAR dv/dt EAS TJ, Tstg MDP5N50B MDF5N50B 500 ±30 5.0 5.0* 3.2 3.2* 20 20* 93 27 0.74 0.22 9.3 4.5 230 -55~150 Unit V V A A A W W/ oC mJ V/ns mJ oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) Dec 2011. Version 1.0 Symbol RθJA RθJC MDP5N50B 62.5 1.35 MDF5N50B 62.5 4.6 Unit oC/W 1 MagnaChip Semiconductor Ltd. MDP5N50B / MDF5N50B N-channel MOSFET 500V Ordering Information Part Number MDP5N50BTH MDF5N50BTH Temp. Range -55~150oC -55~150oC Package TO-220 TO-220F Packing Tube Tube RoHS Status Halogen Free Halogen Free Electrical Charact.


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