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MDIB6N70C Datasheet

Part Number MDIB6N70C
Manufacturers MagnaChip
Logo MagnaChip
Description N-Channel Trench MOSFET
Datasheet MDIB6N70C DatasheetMDIB6N70C Datasheet (PDF)

MDIB6N70C N-channel MOSFET 700V MDIB6N70C N-Channel MOSFET 700V, 5.0A, 1.8Ω General Description The MDIB6N70C use advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDIB6N70C is suitable device for SMPS, HID and general purpose applications. Features VDS = 700V ID = 5.0A RDS(ON) ≤ 1.8Ω @VGS = 10V @VGS = 10V Applications Power Supply PFC High Current, High Speed Switching GDS TO-251 (IPAK) Absolute Maximum Rati.

  MDIB6N70C   MDIB6N70C






N-Channel Trench MOSFET

MDIB6N70C N-channel MOSFET 700V MDIB6N70C N-Channel MOSFET 700V, 5.0A, 1.8Ω General Description The MDIB6N70C use advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDIB6N70C is suitable device for SMPS, HID and general purpose applications. Features VDS = 700V ID = 5.0A RDS(ON) ≤ 1.8Ω @VGS = 10V @VGS = 10V Applications Power Supply PFC High Current, High Speed Switching GDS TO-251 (IPAK) Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Peak Diode Recovery dv/dt(3) Repetitive Pulse Avalanche Energy(4) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) TC=25oC TC=100oC TC=25oC Derate above 25 oC Symbol VDSS VGSS ID IDM PD dv/dt EAR EAS.


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