MDIS3N40

MDIS3N40 N-channel MOSFET 400V MDIS3N40 N-Channel MOSFET 400V, 2.0A, 3.4Ω General Description The MDIS3N40 uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDIS3N40 is suitable device for SMPS, HID and general purpose applications. Features  VDS = 400V  ID = 2.0A  RDS(ON) ≤ 3.4Ω Applications  Power Supply  PFC  LED TV @VGS = 10V @VGS = 10V TO-251-VS (IPAK-VS) Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Peak Diode Recovery dv/dt(3) Repetitive Pulse Avalanche Energy(4) Avalanche current(1) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range TC=25oC TC=100oC TC=25oC Derate above 25 oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) Feb. 2014. Version 1.1 1 ...