Rectifier Module. MDMA210UB1600PTED Datasheet 

Part Number  MDMA210UB1600PTED 
Description  Standard Rectifier Module 
Manufacture  IXYS 
Total Page  6 Pages 
Datasheet 

Standard Rectifier Module
3~ Rectifier Bridge + Brake Unit + NTC
Part number
MDMA210UB1600PTED
MDMA210UB1600PTED
preliminary
3~
Rectifier
Brake
Chopper
VRRM =
I DAV =
I FSM =
2200 V
210 A
1000 A
VCES = 1200 V
IC25 = 120 A
V =CE(sat) 1.9 V
1214
79
24
4043
32
33
2122
1719
4750
Features / Advantages:
● Package with DCB ceramic
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
● NTC
29 28
2325
Applications:
● 3~ Rectifier with brake unit
for drive inverters
Backside: isolated
Package: E2Pack
● Isolation Voltage: 3600 V~
● Industry standard outline
● RoHS compliant
● PressFitPins for PCB mounting
● Height: 17 mm
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
● Phase Change Material available
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimerelectronics.
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20191220f

Rectifier
Symbol
VRSM
VRRM
IR
VF
I DAV
Definition
Conditions
max. nonrepetitive reverse blocking voltage
max. repetitive reverse blocking voltage
reverse current
forward voltage drop
bridge output current
VR = 2200 V
VR = 2200 V
IF = 70 A
IF = 210 A
IF = 70 A
IF = 210 A
TC = 85°C
rectangular
d=⅓
VF0
rF
R thJC
R thCH
Ptot
I FSM
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
I²t value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
CJ junction capacitance
VR = 400 V; f = 1 MHz
MDMA210UB1600PTED
preliminary
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 150°C
TVJ = 25°C
TVJ = 125 °C
TVJ = 150°C
Ratings
min. typ. max. Unit
2300 V
2200 V
100 µA
2 mA
1.23 V
1.75 V
1.19 V
1.67 V
210 A
TVJ = 150°C
TC = 25°C
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 25°C
0.82 V
5.2 mΩ
0.5 K/W
0.1 K/W
250 W
1.00 kA
1.08 kA
850 A
920 A
5.00 kA²s
4.85 kA²s
3.62 kA²s
3.52 kA²s
33 pF
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20191220f

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