Rectifier Module. MDMA210UB1600PTED Datasheet

MDMA210UB1600PTED Datasheet PDF


Part Number

MDMA210UB1600PTED

Description

Standard Rectifier Module

Manufacture

IXYS

Total Page 6 Pages
Datasheet
Download MDMA210UB1600PTED Datasheet



MDMA210UB1600PTED
Standard Rectifier Module
3~ Rectifier Bridge + Brake Unit + NTC
Part number
MDMA210UB1600PTED
MDMA210UB1600PTED
preliminary
3~
Rectifier
Brake
Chopper
VRRM =
I DAV =
I FSM =
2200 V
210 A
1000 A
VCES = 1200 V
IC25 = 120 A
V =CE(sat) 1.9 V
12-14
7-9
2-4
40-43
32
33
21-22
17-19
47-50
Features / Advantages:
Package with DCB ceramic
Improved temperature and power cycling
Planar passivated chips
Very low forward voltage drop
Very low leakage current
NTC
29 28
23-25
Applications:
3~ Rectifier with brake unit
for drive inverters
Backside: isolated
Package: E2-Pack
Isolation Voltage: 3600 V~
Industry standard outline
RoHS compliant
PressFit-Pins for PCB mounting
Height: 17 mm
Base plate: Copper
internally DCB isolated
Advanced power cycling
Phase Change Material available
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20191220f

MDMA210UB1600PTED
Rectifier
Symbol
VRSM
VRRM
IR
VF
I DAV
Definition
Conditions
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
reverse current
forward voltage drop
bridge output current
VR = 2200 V
VR = 2200 V
IF = 70 A
IF = 210 A
IF = 70 A
IF = 210 A
TC = 85°C
rectangular
d=
VF0
rF
R thJC
R thCH
Ptot
I FSM
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
I²t value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
CJ junction capacitance
VR = 400 V; f = 1 MHz
MDMA210UB1600PTED
preliminary
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 150°C
TVJ = 25°C
TVJ = 125 °C
TVJ = 150°C
Ratings
min. typ. max. Unit
2300 V
2200 V
100 µA
2 mA
1.23 V
1.75 V
1.19 V
1.67 V
210 A
TVJ = 150°C
TC = 25°C
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 25°C
0.82 V
5.2 m
0.5 K/W
0.1 K/W
250 W
1.00 kA
1.08 kA
850 A
920 A
5.00 kA²s
4.85 kA²s
3.62 kA²s
3.52 kA²s
33 pF
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20191220f




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