Rectifier Module. MDNA240U2200ED Datasheet 

Part Number  MDNA240U2200ED 
Description  High Voltage Standard Rectifier Module 
Manufacture  IXYS 
Total Page  5 Pages 
Datasheet 

MDNA240U2200ED
High Voltage Standard Rectifier Module
3~ Rectifier Bridge
3~
Rectifier
VRRM =
I DAV =
I FSM =
2200 V
240 A
1500 A
Part number
MDNA240U2200ED
2730
3336
4043
2325
4547
4850
2022
Backside: isolated
Features / Advantages:
● Package with DCB ceramic
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
Applications:
● Diode for main rectification
● For single and three phase
bridge configurations
● Supplies for DC power equipment
● Input rectifiers for PWM inverter
● Battery DC power supplies
● Field supply for DC motors
Package: E2Pack
● Isolation Voltage: 4300 V~
● Industry standard outline
● RoHS compliant
● Height: 30 mm
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimerelectronics.
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20190401d

Rectifier
Symbol
VRSM
VRRM
IR
VF
I DAV
Definition
Conditions
max. nonrepetitive reverse blocking voltage
max. repetitive reverse blocking voltage
reverse current
forward voltage drop
bridge output current
VR = 2200 V
VR = 2200 V
IF = 80 A
IF = 240 A
IF = 80 A
IF = 240 A
TC = 90°C
rectangular
d = 120°
VF0
rF
R thJC
R thCH
Ptot
I FSM
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
I²t value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
CJ junction capacitance
VR = 700 V; f = 1 MHz
MDNA240U2200ED
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 150°C
TVJ = 25°C
TVJ = 125 °C
TVJ = 150°C
Ratings
min. typ. max. Unit
2300 V
2200 V
200 µA
2 mA
1.27 V
1.90 V
1.22 V
2.00 V
240 A
TVJ = 150°C
TC = 25°C
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 25°C
0.10
40
0.79 V
5.1 mΩ
0.35 K/W
K/W
355 W
1.50 kA
1.62 kA
1.28 kA
1.38 kA
11.3 kA²s
10.9 kA²s
8.13 kA²s
7.87 kA²s
pF
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20190401d

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