MDO1201-22N1
Rectifier Diode Module
FEATURES ·Isolated Base Plate ·Low Forward Voltage ·Minimum Lot-to-Lot variations fo...
MDO1201-22N1
Rectifier Diode Module
FEATURES ·Isolated Base Plate ·Low Forward
Voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·These devices are ideally suited for power converters,
motors drives and other applications where switching losses are significant portion of the total losses.
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
VR
Repetitive Peak Reverse
Voltage
IF(AV)
Average Forward Current
IFSM
Surge Forward Current
VISO
Maximum Power Dissipation
TJ
Junction Temperature
Tstg
Storage Temperature Range
CONDITIONS
TC=100℃ Tp=10ms，TJ=160℃
VALUE UNIT
2200
V
1280
A
36
kA
3000
V
-40~160
℃
-55~160
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
Per diode
MAX 0.042
UNIT ℃/W
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ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
VFM
Forward
Voltage drop
IRRM
Instantaneous Reverse Current
PACKAGE OUTLINE Dimensions in mm (1mm = 0.0394“)
MDO1201-22N1
Rectifier Diode Module
CONDITIONS IF= 3140A, TJ= 25℃ VR= VRRM, TJ= 25℃ VR= VRRM，TJ= 125℃
MAX 1.3 5 70
UNIT V mA mA
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in...
