MDP06N090 – Single N-Channel Trench MOSFET 60V
MDP06N090
Single N-channel Trench MOSFET 60V, 62A, 9.0mΩ
ㄹ
General Desc...
MDP06N090 – Single N-Channel Trench
MOSFET 60V
MDP06N090
Single N-channel Trench
MOSFET 60V, 62A, 9.0mΩ
ㄹ
General Description
The MDP06N090 uses advanced MagnaChip’s
MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDP06N090 is suitable device for Synchronous Rectification For Server and general purpose applications.
Features
VDS = 60V ID = 62A @VGS = 10V RDS(ON)
< 9.0 mΩ @VGS = 10V 100% UIL Tested
D
TO-220
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source
Voltage
Gate-Source
Voltage Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2)
TC=25oC TC=100oC
TC=25oC TC=100oC
Junction and Storage Temperature Range
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case
Apr. 2015. Version 1.0
1
G S
Symbol VDSS VGSS
ID
IDM
PD
EAS TJ, Tstg
Rating 60 ±...
