MDP10N055TH– Single N-Channel Trench MOSFET 100V
MDP10N055
Single N-channel Trench MOSFET 100V, 120A, 5.5mΩ
General De...
MDP10N055TH– Single N-Channel Trench
MOSFET 100V
MDP10N055
Single N-channel Trench
MOSFET 100V, 120A, 5.5mΩ
General Description
Features
The MDP10N055 uses advanced MagnaChip’s
MOSFET Technology, which provides high performance in on-state resistance, fast switching performance, and excellent quality.
These devices can also be utilized in industrial applications such as Low Power Drives of E-bike (E-Vehicles), DC/DC converter, and general purpose applications.
VDS = 100V ID = 120A @VGS = 10V Very low on-resistance RDS(ON)
< 5.5 mΩ @VGS = 10V 100% UIL Tested 100% Rg Tested 175 oC operating temperature
D
G D S
TO-220
Absolute Maximum Ratings (TJ = 25 oC)
Characteristics
Drain-Source
Voltage
Gate-Source
Voltage Continuous Drain Current (1) Pulsed Drain Current (2) Power Dissipation Single Pulse Avalanche Energy (3)
TC=25oC (Silicon Limited) TC=25oC (Package Limited) TC=100oC (Silicon Limited)
TC=25oC TC=100oC
Junction and Storage Temperature Ran...
