MDP10N055TH

MDP10N055TH– Single N-Channel Trench MOSFET 100V MDP10N055TH Single N-channel Trench MOSFET 100V, 120A, 5.5mΩ General Description Features The MDP10N055TH uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance, and excellent quality. These devices can also be utilized in industrial applications such as Low Power Drives of E-bike (E-Vehicles), DC/DC converter, and general purpose applications.  VDS = 100V  ID = 120A @VGS = 10V  Very low on-resistance RDS(ON) < 5.5 mΩ @VGS = 10V  100% UIL Tested  100% Rg Tested  175 oC operating temperature D GDS TO-220 Absolute Maximum Ratings (TJ = 25 oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current (2) TC=25oC (Silicon Limited) TC=25oC (Package Limited) TC=100oC (Silicon Limited) Power Dissipation Single Pulse Avalanche Energy (3) TC=25oC TC=100oC Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case Jul. 2021. Version 1.7 1 G S Symbol VDSS VGSS ID IDM PD EAS TJ, Tstg Rating Unit 100 V ±20 V 130 120 A 92 480 188 W 93 288 mJ -55~175 oC Symbol RθJA RθJC Rating 62.5 0.8 Unit oC/W Magnachip Semiconductor Ltd. MDP10N055TH– Single N-Channel Trench MOSFET 100V Ordering Information Part Number MDP10N055TH Temp. Range -55~175oC Package TO-220 Packing Tube RoHS Sta...