MDP10N60G/MDF10N60G N-channel MOSFET 600V
MDP10N60G/MDF10N60G
N-Channel MOSFET 600V, 10A, 0.7Ω
General Description
The...
MDP10N60G/MDF10N60G N-channel
MOSFET 600V
MDP10N60G/MDF10N60G
N-Channel
MOSFET 600V, 10A, 0.7Ω
General Description
These N-channel
MOSFET are produced using advanced MagnaChip’s
MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality.
These devices are suitable device for SMPS, high Speed switching and general purpose applications.
Features
VDS = 600V VDS = 660V ID = 10A RDS(ON) ≤ 0.7Ω
Applications
@ Tjmax @ VGS = 10V @ VGS = 10V
Power Supply PFC High Current, High Speed Switching
D
TO-220 MDP Series
TO-220F MDF Series
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source
Voltage
Drain-Source
Voltage @ Tjmax
Gate-Source
Voltage
Continuous Drain Current Pulsed Drain Current(1)
Power Dissipation Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4)
TC=25oC TC=100oC
TC=25oC Derate above 25 oC
Junction and Storage Temperature Range * Id limited by maximum junction t...