MDP12N50F/MDF12N50F N-channel MOSFET 500V
MDP12N50F/MDF12N50F
N-Channel MOSFET 500V, 11.5A, 0.7Ω
General Description
T...
MDP12N50F/MDF12N50F N-channel
MOSFET 500V
MDP12N50F/MDF12N50F
N-Channel
MOSFET 500V, 11.5A, 0.7Ω
General Description
These N-channel
MOSFET are produced using advanced MagnaChip’s
MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality.
These devices are suitable device for SMPS, high Speed switching and general purpose applications.
Features
VDS = 500V ID = 11.5A RDS(ON) ≤ 0.7Ω
@ VGS = 10V @ VGS = 10V
Applications
Power Supply PFC High Current, High Speed Switching
D
TO-220 MDP Series
TO-220F MDF Series
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source
Voltage
Gate-Source
Voltage
Continuous Drain Current Pulsed Drain Current(1)
Power Dissipation Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4)
TC=25oC TC=100oC
TC=25oC Derate above 25 oC
Junction and Storage Temperature Range * Id limited by maximum junction temperature
G
S`
Symbol VDSS VGSS
ID
IDM
PD
EAR dv/dt EAS TJ, Tstg
MDP12N50 MDF12N50
500
±30
.11.5
11.5*
7.0 7.0*
46 46*
165 42
1.33 0.32
16.5
4.5
460
-55~150
Unit V V A A A
W W/ oC
mJ V/ns mJ oC
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1)
Symbol RθJA RθJC
MDP12N50 62.5 0.75
MDF12N50 62.5 3.0
Unit oC/W
Dec. 2014 Version 1.4
1 MagnaChip Semiconductor Ltd.
MDP12N50F/MDF12N50F N-channel
MOSFET 500V
Ordering Information
Part Number MDP12...