MDP13N50

MDP13N50 N-channel MOSFET 500V MDP13N50 N-Channel MOSFET 500V, 13.0A, 0.5Ω General Description The MDP13N50 uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. MDP13N50 is suitable device for SMPS, HID and general purpose applications. Features VDS = 500V ID = 13.0A @VGS = 10V RDS(ON) < 0.5Ω @VGS = 10V Applications Power Supply HID Lighting Absolute Maximum Ratings (Ta = 25 C) Characteristics Drain-Source Voltage Drain-Source Voltage @ Tjmax Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Peak Diode Recovery dv/dt (3) (4) (1) o Symbol VDSS VDSS @ Tjmax VGSS TC=25 C TC=100 C TC=25 C Derate above 25 C o o o o Rating 500 550 ±30 13 8.2 52 187 1.49 4.5 580 -55~150 Unit V V V A A A W o W/ C V/ns mJ o ID IDM PD Dv/dt EAS TJ, Tstg Single Pulse Avalanche Energy Junction and Storage Temperature Range C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (1) (1) Symbol RθJA RθJC Rating 62.5 0.67 Unit o C/W Nov 2009. Version 2.0 1 MagnaChip Semiconductor Ltd. Free Datasheet http://www.Datasheet4U.com MDP13N50 N-channel MOSFET 500V Ordering Information Part Number MDP13N50TH Temp. Range -55~150 C o Package TO-220 Packing Tube ROHS status Halogen Free Electrical Characteristics (Ta =25 C) Characteristics Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Dr...