MDP13N50B / MDF13N50B N-channel MOSFET 500V
MDP13N50B / MDF13N50B
N-Channel MOSFET 500V, 13.0 A, 0.5Ω
General Descript...
MDP13N50B / MDF13N50B N-channel
MOSFET 500V
MDP13N50B / MDF13N50B
N-Channel
MOSFET 500V, 13.0 A, 0.5Ω
General Description
The MDP/F13N50B uses advanced Magnachip’s
MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
MDP/F13N50B is suitable device for SMPS, HID and general purpose applications.
Features
VDS = 500V ID = 13.0A RDS(ON) ≤ 0.5Ω
@VGS = 10V @VGS = 10V
Applications
Power Supply PFC Ballast
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source
Voltage Gate-Source
Voltage
Characteristics
Continuous Drain Current Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range ※ Id limited by maximum junction temperature
TC=25oC TC=100oC
TC=25oC Derate above 25 oC
Symbol VDSS VGSS
ID
IDM
PD
EAR dv/dt EAS TJ, Tstg
MDP13N50B MDF13N50B 500 ±30
13 13* 8.2 8.2* 52 52* 187 41 1.49 0.33
18.7 4.5 580 -55~150
Unit V V A A A W
W/ oC mJ V/ns mJ oC
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1)
Dec 2011. Version 1.0
Symbol RθJA RθJC
MDP13N50B 62.5 0.67
MDF13N50B 62.5 3.05
Unit oC/W
1 MagnaChip Semiconductor Ltd.
MDP13N50B / MDF13N50B N-channel
MOSFET 500V
Ordering Information
Part Number MDP13N50BTH MDF13N50BTH
Temp. Range -55~150oC -55~150oC
Package TO-220 TO-220F
Packing Tube Tube
RoHS Status Halogen Free Halogen Free
E...