MDP1901 – 100V Single N-Channel Trench MOSFET
MDP1901
Single N-channel Trench MOSFET 100V, 36A, 22mΩ
General Descripti...
MDP1901 – 100V Single N-Channel Trench
MOSFET
MDP1901
Single N-channel Trench
MOSFET 100V, 36A, 22mΩ
General Description
The MDP1901 uses advanced Magnachip’s
MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDP1901 is suitable device for DC/DC Converters and general purpose applications.
Features
VDS = 100V
ID = 36A @VGS = 10V
RDS(ON)
< 22mΩ @VGS = 10V
< 25mΩ @VGS = 6.0V
D
GDS
G S
Absolute Maximum Ratings (Tc = 25oC)
Drain-Source
Voltage Gate-Source
Voltage
Characteristics
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
TC=25oC TC=100oC
TC=25oC TC=100oC
Jan. 2021. v1.4
1
Symbol VDSS VGSS
ID IDM
PD
EAS TJ, Tstg
Rating
Unit
100
V
±20
V
36
A
24
A
144
A
34 W
14
200
mJ
-55~150
oC
Symbol RθJA RθJC
Rating 65 1.02
Unit oC/W
Magnachip Semiconductor Ltd.
MDP1901 – 100V Single N-Channel Trench
MOSFET
Ordering Information
Part Number MDP1901TH
Temp. Range -55~150oC
Package TO-220
Packing Tube
Rohs Status Halogen Free
Electrical Characteristics (Tc =25oC)
Characteristics Static Characteristics
Drain-Source Breakdown
Voltage Gate Threshold
Voltage Drain Cut-Off Current Gate Leakage Current
Drain-Source ON Resistance
Forward Transconductance Dynamic Char...