MDP1923 – Single N-Channel Trench MOSFET 100V
MDP1923
Single N-channel Trench MOSFET 100V, 69A, 13.9mΩ
General Descrip...
MDP1923 – Single N-Channel Trench
MOSFET 100V
MDP1923
Single N-channel Trench
MOSFET 100V, 69A, 13.9mΩ
General Description
The MDP1923 uses advanced MagnaChip’s
MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDP1923 is suitable device for Synchronous Rectification for Server / Adapter and general purpose applications.
Features
VDS = 100V ID = 69A @VGS = 10V RDS(ON)
< 13.9 mΩ @VGS = 10V 100% UIL Tested 100% Rg Tested
D
TO-220
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source
Voltage
Gate-Source
Voltage Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy
TC=25oC TC=100oC
TC=25oC TC=100oC
Junction and Storage Temperature Range
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case
July 2014. Rev 1.0
1
G S
Symbol VDSS VGSS ID IDM PD EAS(2) TJ, Ts...
