MDP1933– Single N-Channel Trench MOSFET 80V
MDP1933
Single N-channel Trench MOSFET 80V, 105A, 7.0mΩ
General Descriptio...
MDP1933– Single N-Channel Trench
MOSFET 80V
MDP1933
Single N-channel Trench
MOSFET 80V, 105A, 7.0mΩ
General Description
The MDP1933 uses advanced MagnaChip’s
MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDP1933 is suitable device for Synchronous Rectification For Server and general purpose applications.
Features
VDS = 80V ID = 105A @VGS = 10V RDS(ON)
< 7.0 mΩ @VGS = 10V 100% UIL Tested 100% Rg Tested
D
TO-220
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source
Voltage
Gate-Source
Voltage Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2)
TC=25oC (Silicon Limited) TC=100oC
TC=25oC TC=100oC
Junction and Storage Temperature Range
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case
Jun. 2014. Version 1.0
1
G S
Symbol VDSS VGSS
ID
IDM
PD
E...
