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MDP7N60 Datasheet

Part Number MDP7N60
Manufacturers MagnaChip
Logo MagnaChip
Description N-Channel MOSFET
Datasheet MDP7N60 DatasheetMDP7N60 Datasheet (PDF)

MDP7N60 N-channel MOSFET 600V MDP7N60 N-Channel MOSFET 600V, 7A, 1.15Ω General Description The MDP7N60 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDP7N60 is suitable device for SMPS, high Speed switching and general purpose applications. Features VDS = 600V VDS = 660V ID = 7.0A RDS(ON) ≤ 1.15Ω Applications @ Tjmax @ VGS = 10V @ VGS = 10V Power Supply PFC High Current, High Speed Switching Absolute .

  MDP7N60   MDP7N60






Part Number MDP7N60B
Manufacturers MagnaChip
Logo MagnaChip
Description N-Channel MOSFET
Datasheet MDP7N60 DatasheetMDP7N60B Datasheet (PDF)

MDP7N60B / MDF7N60B N-channel MOSFET 600V MDP7N60B / MDF7N60B N-Channel MOSFET 600V, 7.0A, 1.15Ω General Description These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Features VDS = 600V VDS = 660V ID = 7.0A RDS(ON) ≤ 1.15Ω @ Tjmax @ VGS = 10V @ VGS = 10V Applications Power Su.

  MDP7N60   MDP7N60







N-Channel MOSFET

MDP7N60 N-channel MOSFET 600V MDP7N60 N-Channel MOSFET 600V, 7A, 1.15Ω General Description The MDP7N60 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDP7N60 is suitable device for SMPS, high Speed switching and general purpose applications. Features VDS = 600V VDS = 660V ID = 7.0A RDS(ON) ≤ 1.15Ω Applications @ Tjmax @ VGS = 10V @ VGS = 10V Power Supply PFC High Current, High Speed Switching Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Drain-Source Voltage @ Tjmax Gate-Source Voltage Characteristics Continuous Drain Current (※) Pulsed Drain Current(1) Power Dissipation Repetitive Avalanche Energy EAR(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range ※ Id limited by maximum junction temperature TC=25oC TC=100oC TC=25oC Derate above 25 oC Symbol VDSS VDSS @ Tjmax VGSS ID IDM PD EAR Dv/dt EAS TJ, Tstg Rating 600 660 ±30 7.0 4.4 28 131 1.05 13.1 4.5 220 -55~150 Unit V V V A A A W W/ oC mJ V/ns mJ oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) Nov. 2009 Version 2.1 1 Symbol RθJA RθJC Rating 62.5 0.95 Unit oC/W MagnaChip Semiconductor Ltd. MDP7N60 N-channel MOSFET 600V Ordering Information Part Number MDP7N60TH Temp. Range -55~150oC Package TO-220 Packing Tube RoHS Status Halogen Free Electrical Characteristics (Ta =25oC.


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