MDP7N60B

MDP7N60B / MDF7N60B N-channel MOSFET 600V MDP7N60B / MDF7N60B N-Channel MOSFET 600V, 7.0A, 1.15Ω General Description These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Features VDS = 600V VDS = 660V ID = 7.0A RDS(ON) ≤ 1.15Ω @ Tjmax @ VGS = 10V @ VGS = 10V Applications Power Supply PFC High Current, High Speed Switching D G TO-220 MDP Series TO-220F MDF Series S Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Drain-Source Voltage @ Tjmax Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range * Id limited by maximum junction temperature TC=25 C Derate above 25 C o o Symbol VDSS VDSS @ Tjmax VGSS TC=25 C TC=100 C IDM PD EAR dv/dt EAS TJ, Tstg o o MDP7N60B 600 660 ±30 7.0 4.4 28 131 1.05 13.1 4.5 220 MDF7N60B Unit V V V ID 7.0* 4.4* 28* 42 0.33 A A A W W/ oC mJ V/ns mJ o -55~150 C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case(1) (1) Symbol RθJA RθJC MDP7N60B 62.5 0.95 MDF7N60B 62.5 3.01 Unit o C/W June. 2010 Version 1.3 1 MagnaChip Semiconductor Ltd. Free Datasheet http://www.Datas...