MDP8N60 N-channel MOSFET 600V
MDP8N60
N-Channel MOSFET 600V, 8A, 1.0Ω
General Description
The MDP8N60 uses advanced Ma...
MDP8N60 N-channel
MOSFET 600V
MDP8N60
N-Channel
MOSFET 600V, 8A, 1.0Ω
General Description
The MDP8N60 uses advanced MagnaChip’s
MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
MDP8N60 is suitable device for SMPS, high Speed switching and general purpose applications.
Features
VDS = 600V VDS = 660V ID =8.0A RDS(ON) ≤ 1.0Ω
Applications
@ Tjmax @ VGS = 10V @ VGS = 10V
Power Supply PFC High Current, High Speed Switching
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source
Voltage Drain-Source
Voltage @ Tjmax Gate-Source
Voltage
Characteristics
Continuous Drain Current (※)
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy EAR(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range ※ Id limited by maximum junction temperature
TC=25oC TC=100oC
TC=25oC Derate above 25 oC
Symbol VDSS
VDSS @ Tjmax VGSS
ID
IDM
PD
EAR Dv/dt EAS TJ, Tstg
Rating 60...