MDQ10N026TH– Single N-Channel Trench MOSFET 100V
MDQ10N026TH
Single N-channel Trench MOSFET 100V, 160A, 2.6mΩ
General Description
Features
The MDQ10N026TH uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance, and excellent quality.
These devices can also be utilized in industrial applications such as Low Power Drives of E-Vehicles(E-bike), DC/DC converter, and general purpose applications.
VDS = 100V ID = 160A @V.
N-Channel MOSFET
MDQ10N026TH– Single N-Channel Trench MOSFET 100V
MDQ10N026TH
Single N-channel Trench MOSFET 100V, 160A, 2.6mΩ
General Description
Features
The MDQ10N026TH uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance, and excellent quality.
These devices can also be utilized in industrial applications such as Low Power Drives of E-Vehicles(E-bike), DC/DC converter, and general purpose applications.
VDS = 100V ID = 160A @VGS = 10V Very low on-resistance RDS(ON)
< 2.6 mΩ @VGS = 10V 100% UIL Tested 100% Rg Tested
D
G D
S
TO-247
Absolute Maximum Ratings (TJ = 25 oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current (2)
TC=25oC (Silicon Limited) TC=25oC (Package Limited) TC=100oC (Silicon Limited)
Power Dissipation Single Pulse Avalanche Energy (3)
TC=25oC TC=100oC
Junction and Storage Temperature Range
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
Jan. 2021. Version 1.2
1
G
Symbol VDSS VGSS ID IDM PD EAS TJ, Tstg
S
Rating
Unit
100
V
±20
V
300
160 A
212
640
468 W
234
544
mJ
-55~175
oC
Symbol RθJA RθJC
Rating 40 0.32
Unit oC/W
Magnachip Semiconductor Ltd.
MDQ10N026TH– Single N-Channel Trench MOSFET 100V
Ordering Information
Part Number MDQ10N026TH
Temp. Range -55~175oC
Package TO-247
Packing Tube
RoHS Status Halogen Free
Electrical Cha.