MDS150
150 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz
GENERAL DESCRIPTION
The MDS150 www.DataSheet4U.net is a hig...
MDS150
150 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz
GENERAL DESCRIPTION
The MDS150 www.DataSheet4U.net is a high power COMMON BASE bipolar transistor. It is designed for MODE-S systems in the 1030 - 1090 MHz frequency band. The transistor includes double input prematch and output prematch for broadband performance. The device has gold thin-film metallization and diffused ballasting in a hermetically sealed package for proven highest MTTF.
CASE OUTLINE 55AW Style 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation Device Dissipation @25C1 350 W Maximum
Voltage and Current Collector to Emitter
Voltage (BVces) 55 V Emitter to Base
Voltage (BVebo) 3.5 V Peak Collector Current (Ic) 10 A Maximum Temperatures Storage Temperature -65 to +150 C Operating Junction Temperature +200 C ELECTRICAL CHARACTERISTICS @ 25C SYMBOL Pout Pin Pg c VSWR Pd1 Trise1 CHARACTERISTICS Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance Pulse Droop Rise Time TEST CONDITIONS F = 1030, 1090 MHz Vcc = 50 Volts PW = Note 2 DF = Note 2 MIN 150 20 8.75 40 3:1 0.5 100 TYP MAX UNITS W W dB % dB nSec
FUNCTIONAL CHARACTERISTICS @ 25C BVebo BVces BVcbo hFE jc1 Emitter to Base Breakdown Collector to Emitter Breakdown Collector to Base Breakdown DC – Current Gain Thermal Resistance Ie = 10 mA Ic = 30 mA Ic = 30 mA Vce = 5V, Ic = 1 A 3.5 55 55 10 0.5 V V V C/W
NOTE 1: AT RATED OUTPUT POWER AND PULSE CONDITIONS NOTE 2: Burst: 0.5uS ON, 0.5uS OFF x 128, repeated every 6.4m...