MDS1652E

MDS1652E – Single N-Channel Trench MOSFET 30V Preliminary – Subject to change without notice ` MDS1652E Single N-channel Trench MOSFET 30V, 16A, 5.0mΩ ㄹ General Description The MDS1652E uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. Excellent low RDS(ON), low gate charge and operation for Battery Applications. Features  VDS = 30V  ID = 16A @VGS = 10V  RDS(ON) (MAX) < 5.0mΩ @VGS = 10V < 8.5mΩ @VGS = 4.5V 5(D) 6(D) 7(D) 8(D) 4(G) 3(S) 2(S) 1(S) D G S Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy(2) Junction and Storage Temperature Range TA=25oC TA=100oC TA=25oC TA=100oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case Apr. 2011 Rev 2.2 ...