MDS1903

MDS1903 – Single N-Channel Trench MOSFET 100V MDS1903 Single N-channel Trench MOSFET 100V, 3.3A, 110mΩ ㄹ General Description The MDS1903 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDS1903 is suitable device for DC to DC converter and general purpose applications. Features  VDS = 100V  ID = 3.3A @VGS = 10V  RDS(ON) (MAX) < 110mΩ @VGS = 10V < 120mΩ @VGS = 6.0V 5(D) 6(D) 7(D) 8(D) 4(G) 3(S) 2(S) 1(S) D G S Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case TA=25oC TA=70oC TA=25oC TA=70oC Jan. 2021. Version 1.1 1 Symbol VDSS VGSS ID IDM PD EAS TJ, Tstg Rating Unit 100 V ±20 V 3.3 A 2.6 12 A 2.5 W 1.6 21 mJ -55~150 oC Symbol RθJA RθJC Rating 50 25 Unit oC/W Magnachip Semiconductor Ltd. MDS1903 – Single N-Channel Trench MOSFET 100V Ordering Information Part Number MDS1903URH Temp. Range -55~150oC Package SOIC-8 Packing Tape & Reel Rohs Status Halogen Free Electrical Characteristics (TJ =25oC) Characteristics Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Drain Cut-Off Current Gate Leakage Curren...