MDS1951– Single N-Channel Trench MOSFET 60V
MDS1951
Single N-Channel Trench MOSFET 60V, 6A, 45mΩ
General Description
T...
MDS1951– Single N-Channel Trench
MOSFET 60V
MDS1951
Single N-Channel Trench
MOSFET 60V, 6A, 45mΩ
General Description
The MDS1951 uses advanced Magnachip’s
MOSFET Technology, which provides low on-state resistance, high switching performance and excellent reliability.
Features
VDS = 60V ID = 6A @VGS = 10V RDS(ON)
< 45mΩ @ VGS = 10V < 55mΩ @ VGS = 4.5V
Applications
Inverters General purpose applications
5(D) 6(D) 7(D) 8(D)
D
4(G)
3(S) 2(S) 1(S)
G
Absolute Maximum Ratings (Ta =25oC unless otherwise noted)
Drain-Source
Voltage Gate-Source
Voltage
Continuous Drain Current(2)
Characteristics
Pulsed Drain Current
Power Dissipation for Single Operation
Single Pulse Avalanche Energy(3) Junction and Storage Temperature Range
TA=25oC TA=70oC
TA=25oC TA=70oC
Symbol VDSS VGSS
ID
IDM
PD
EAS TJ, Tstg
Thermal Characteristic
Characteristics Thermal Resistance, Junction-to-Ambient (Steady-State)(1) Thermal Resistance, Junction-to-Case
Symbol RθJA RθJC
June 2...