MDS3651– Single P-Channel Trench MOSFET, -30V, -5.3A, 35mΩ
MDS3651
Single P-Channel Trench MOSFET, -30V, -6.0A, 35mΩ
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MDS3651– Single P-Channel Trench
MOSFET, -30V, -5.3A, 35mΩ
MDS3651
Single P-Channel Trench
MOSFET, -30V, -6.0A, 35mΩ
General Description
The MDS3651 uses advanced MagnaChip’s
MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability
Features
VDS = -30V ID = -6.0A @ VGS = -10V RDS(ON)
<35m @ VGS = -10V <55m @ VGS = -4.5V
Applications
Inverters General purpose applications
5(D) 6(D) 7(D) 8(D)
D
4(G)
3(S) 2(S) 1(S)
G
Absolute Maximum Ratings (Ta =25oC unless otherwise noted)
Drain-Source
Voltage Gate-Source
Voltage
Characteristics
Continuous Drain Current
Pulsed Drain Current Power Dissipation(1) Single Pulse Avalanche Energy(2) Junction and Storage Temperature Range
Ta=25oC Ta=100oC
Ta=25oC Ta=100oC
Symbol VDSS VGSS
ID
IDM
PD
EAS TJ, Tstg
S
Rating -30 ±20 -6.0 -4.1 -30 2 0.8 60.5
-55~150
Unit V V A A A
W
mJ oC
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient(Steady-State)(1) Thermal Resistance, Junction-to-Case
Symbol RθJA RθJC
Rating 62.5 60
Unit oC/W
January 2009. Version 2.0
1 MagnaChip Semiconductor Ltd.
MDS3651– Single P-Channel Trench
MOSFET, -30V, -5.3A, 35mΩ
Ordering Information
Part Number MDS3651URH
Temp. Range -55~150oC
Package SOIC-8
Packing Tape & Reel
RoHS Status Halogen Free
Electrical Characteristics (Ta =25oC unless otherwise noted)
Characteristics Static Characteristics
Drain-Source Breakdown
Voltage Gate Threshold
Voltage Drain Cut-Off Cu...