MDS3653

MDS3653– Single P-Channel Trench MOSFET, -30V, -13A, 7mΩ MDS3653 Single P-Channel Trench MOSFET, -30V, -13A, 7mΩ General Description The MDS3653 uses advanced Magnachip’s MOSFET Technology to provide low on-state resistance. This device is suited for Power Management and load switching applications common in Note PC Battery. Features  VDS = -30V  ID = -13A @VGS = -10V  RDS(ON) < 7mΩ @VGS = -10V < 12mΩ @VGS = -4V Applications  Load Switch  General purpose applications  Smart Module for Note PC Battery D 8(D)7(D)6(D)5(D) 1(S) 2(S)3(S) 4(G) G S Absolute Maximum Ratings (Ta =25oC unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy Junction and Storage Temperature Range (Note 1) (Note 2) Symbol VDSS VGSS ID IDM PD EAS TJ, Tstg Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1) Symbol RθJA RθJC Rating -30 ±20 -13 -52 2.5 180 -55~150 Rating 50 25 Unit V V A A W mJ oC Unit oC/W Jul. 2021. Version 1.2 1 Magnachip Semiconductor Ltd. MDS3653– Single P-Channel Trench MOSFET, -30V, -13A, 7mΩ Ordering Information Part Number MDS3653URH Temp. Range -55~150oC Package SOIC-8 Packing Tape & Reel RoHS Status Halogen Free Electrical Characteristics (Ta = 25oC unless otherwise noted) Characteristics Static Characteristics Drain-Source Breakdown Voltage Gate Thres...