MDS500L

www.DataSheet4U.com MDS500L 500 Watts, 50 Volts, Pulsed Avionics 1030 MHz PRELIMINARY GENERAL DESCRIPTION The MDS500L is a high power COMMON BASE bipolar transistor. It is designed for MODE-S ELM systems in the 1030 MHz frequency band. The transistor includes input prematch for broadband performance. The device has gold thin-film metallization and diffused ballasting in a hermetically sealed package for proven highest MTTF. CASE OUTLINE 55ST Style 1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation Device Dissipation @25 C1 833 W Maximum Voltage and Current Collector to Emitter Voltage (BVces) 70 V Emitter to Base Voltage (BVebo) 3.5 V Peak Collector Current (Ic) 25 A Maximum Temperatures Storage Temperature -65 to +150 C Operating Junction Temperature +200 C ELECTRICAL CHARACTERISTICS @ 25 C SYMBOL Pout Pin Pg c CHARACTERISTICS Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance Pulse Droop Rise Time TEST CONDITIONS F = 1030 MHz Vcc = 50 Volts PW = Note 2 DF = Note 2 F = 1030 MHz F = 1030 MHz MIN 500 TYP MAX 70 UNITS W W dB % 8.5 50 3:1 0.8 100 VSWR Pd1 Trise1 dB nSec FUNCTIONAL CHARACTERISTICS @ 25 C BVebo BVces BVcbo Ices hFE jc1 Emitter to Base Breakdown Collector to Emitter Breakdown Collector to Base Breakdown Collector to Emitter Leakage DC – Current Gain Thermal Resistance Ie = 30 mA Ic = 50 mA Ic = 50 mA Vce = 50V Vce = 5V, Ic = 1.0 A 3.0 70 70 15 20 0.21 C/W V V V mA NOTE 1: AT RATED OUTPUT POWER AND PULSE CONDITIONS NOTE 2: ...