MDS60L

MDS60L 60 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION The MDS60L www.DataSheet4U.net is a high power COMMON BASE bipolar transistor. It is designed for MODE-S ELM systems in the 1030 - 1090 MHz frequency band. The transistor includes a double input prematch for broadband performance. The device has gold thin-film metallization and diffused ballasting in a hermetically sealed package for proven highest MTTF. CASE OUTLINE 55AW Style 1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation Device Dissipation @25C1 120 W Maximum Voltage and Current Collector to Emitter Voltage (BVces) 65 V Emitter to Base Voltage (BVebo) 3.5 V Peak Collector Current (Ic) 4A Maximum Temperatures Storage Temperature -65 to +150 C Operating Junction Temperature +200 C ELECTRICAL CHARACTERISTICS @ 25C SYMBOL Pout Pin Pg c VSWR Pd1 Trise1 CHARACTERISTICS Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance Pulse Droop Rise Time TEST CONDITIONS F = 1030, 1090 MHz Vcc = 50 Volts PW = Note 2 DF = Note 2 MIN 60 6 10 34 2:1 0.8 100 TYP MAX UNITS W W dB % dB nSec FUNCTIONAL CHARACTERISTICS @ 25C BVebo BVces BVcbo hFE jc1 Emitter to Base Breakdown Collector to Emitter Breakdown Collector to Base Breakdown DC – Current Gain Thermal Resistance Ie = 5 mA Ic = 25 mA Ic = 25 mA Vce = 5V, Ic = 500 mA 3.5 65 65 20 0.5 V V V C/W NOTE 1: AT RATED OUTPUT POWER AND PULSE CONDITIONS NOTE 2: ELM Burst: 32µSec ON/ 18µSec OFF x 48, repeated at 23mSec Rev C: Updated...