MDT-160

JOINT-STOCK COMPANY «ELECTROVIPRYAMITEL» P H A S E C O N T R O L T H Y R I S T O R - D I O D E www.elvpr.ru M O D U L E S MTT-160, MTTC-160, MTTA-160 MTD-160, MTDC-160, MTDA-160 MDT-160, MDTC-160, MDTA-160 ♦ VDRM/VRRM = 400 - 1600 V ♦ IT(AV) = 160 A (TC = 85 °C) ♦ ITSM = 5 kA (TVj = 125 °C) ♦ Heat transfer through AlN ceramic isolated metal baseplate ♦ Presspack construction 5 ♦ High reliability at thermal cycles (10 at ∆TC = 70 ºC) ♦ Case width 34 mm MAXIMUM RATED VALUES Parameter and conditions Symbol Values min. typ. max. Units Repetitive peak off-state voltage / Repetitive peak reverse voltage, TVj = - 60 °C…+ 125 °C Non-repetitive peak off-state voltage/Non- repetitive peak reverse voltage, TVj = - 60 °C…+ 125 °C Repetitive peak off-state current/ Repetitive peak reverse current, TVj = 125 °C, VD / VR = VDRM / VRRM Max. average on-state current, f = 50 Hz, double side cooled, TC = 85 °C RMS on-state current Surge non-repetitive current, VR = 0, TVj = 125 °C, tp = 10 ms Safety factor Critical rate of rise of on-state current, V = 0,67VDRM , IT = 320 A, IFG = 1 A, tr = 1 µs, f = 50 Hz, TVj =125 °C Critical rate of rise of off-state voltage VD = 0,67VDRM, TVj = 125 °C Gate power loss, DC Operation junction temperature range Storage temperature range VDRM / VRRM 400 - 1600 V VDSM / VRSM 500 - 1700 IDRM / IRRM - - 25 mA IT(AV) IRMS ITSM I2t (diT/dt)crit (dVD/dt)crit 500 PGM TVj Tstg - 60 - 60 - 160 250 5 125 320 1000 4 + 125 + 50 A kA kA2s A/µs V/µs W °...