MDU1051RH

Magnachip Power Technology MDU1051RH MDU1051RH Single N-channel Trench MOSFET 150V 47mΩ 27A General description The MDU1051RH uses advanced Magnachip’s MOSFET technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. These devices can also be utilized in industrial applications such as Synchronous Rectification and general Purpose applications. Features and benefits Magnachip’s MOSFET Technology 100% Avalanche / Rg Tested SS SG Top View PDFN56 DDD D GS SS Bottom View D Applications Specifically for Syncronous Rectification Switching Applications Key performance parameters VDS 150 V RDS(on), max 0.047 Ω ID 27 A QG Junction temperature, max 20.9 nC 150 oC G S Ordering information Type / Ordering Code MDU1051RH http://www.magnachip.com Package PDFN56 Marking MDU1051 Packing Tape & Reel RoHS Status compliant Dec. 2021. ver. 1.0 1/7 All information provided in this document is subject to legal disclaimers Product data sheet Magnachip Power Technology Maximum ratings, at TA = 25oC, unless otherwise specified Parameter Drain-source Voltage Gate-source Voltage Drain current 1) Pulsed drain current Total power dissipation 2) Avalanche energy, single pulse Tc=25oC Tc=100oC Tc=25oC Tc=25oC Tc=100oC Operating and storage temperature MDU1051RH Symbol VDS VGS ID IDM Ptot EAS Tj, Tstg Rating Unit 150 V ± 20 V 27 A 17 A 108 A 66 W 26 W 50 mJ - 55 ~ 150 oC Thermal ch...