MDU10N180

MDU10N180 – Single N-Channel Trench MOSFET 100V MDU10N180 Single N-channel Trench MOSFET 100V, 40A, 18mΩ General Description The MDU10N180 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU10N180 is suitable device for Synchronous Rectification For Server and general purpose applications. Features  VDS = 100V  ID = 40 A @VGS = 10V  Very low on-resistance RDS(ON) < 18.0 mΩ @VGS = 10V < 23.0 mΩ @VGS = 4.5V  100% UIL Tested  100% Rg Tested 1 4 5 8 4 1 PDFN56 Absolute Maximum Ratings (TJ = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current (3) TC=25oC (Silicon Limited) TC=25oC (Package Limited) TC=100oC (Silicon Limited) TA=25oC Power Dissipation Single Pulse Avalanche Energy (2) TC=25oC TC=100oC TA=25oC Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case Jan. 2021. Ver. 1.2 1 D Pin 5,6,7,8 G Pin 4 S Pin 1, 2,3 Symbol VDSS VGSS ID IDM PD EAS TJ, Tstg Rating Unit 100 V ±20 V 48.1 40 30.4 A 12.4 160 83.3 33.3 W 5.5 50 mJ -55~150 oC Symbol RθJA RθJC Rating 22.7 1.5 Unit oC/W Magnachip Semiconductor Ltd. MDU10N180 – Single N-Channel Trench MOSFET 100V Ordering Information Part Number MDU10N180RH Temp. Range -55~150oC Package PDFN56 Packing Tape & Reel RoHS Sta...