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MOSFET. MDU1511 Datasheet |
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MDU1511
Single N-channel Trench MOSFET 30V, 100.0A, 2.4mΩ
General Description
The MDU1511 uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDU1511 is suitable device for DC/DC Converter
and general purpose applications.
Features
VDS = 30V
ID = 100A @VGS = 10V
RDS(ON)
< 2.4 mΩ @VGS = 10V
< 3.3 mΩ @VGS = 4.5V
100% UIL Tested
100% Rg Tested
DD DD
DD DD
D
S SSG
GS SS
PowerDFN56
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2)
Junction and Storage Temperature Range
TC=25oC
TC=70oC
TA=25oC
TA=70oC
TC=25oC
TC=70oC
TA=25oC
TA=70oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient (1)
Steady State
Thermal Resistance, Junction-to-Case
Steady State
May. 2011. Version 1.2
1
G
S
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Rating
30
±20
100.0
94.0
36.1(3)
28.8(3)
100
78.1
50.0
5.5(3)
3.5(3)
287
-55~150
Unit
V
V
A
A
W
mJ
oC
Symbol
RθJA
RθJC
Rating
22.7
1.6
Unit
oC/W
MagnaChip Semiconductor Ltd.
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Ordering Information
Part Number
MDU1511RH
Temp. Range
-55~150oC
Package
PowerDFN56
Packing
Tape & Reel
Quantity
3000 units
Rohs Status
Halogen Free
Electrical Characteristics (TJ = 25oC)
Characteristics
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Symbol
BVDSS
VGS(th)
IDSS
IGSS
Drain-Source ON Resistance
RDS(ON)
Forward Transconductance
Dynamic Characteristics
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Resistance
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
gfs
Qg(10V)
Qg(4.5V)
Qgs
Qgd
Ciss
Crss
Coss
td(on)
tr
td(off)
tf
Rg
VSD
trr
Qrr
Test Condition
ID = 250µA, VGS = 0V
VDS = VGS, ID = 250µA
VDS = 30V, VGS = 0V
TJ=55oC
VGS = ±20V, VDS = 0V
VGS = 10V, ID = 28A
TJ=125oC
VGS = 4.5V, ID = 24A
VDS = 5V, ID = 10A
VDS = 15V, ID = 28A,
VGS = 10V
VDS = 15V, VGS = 0V,
f = 1.0MHz
VGS = 10V, VDS = 15V,
ID = 28A, RG = 3.0Ω
f=1 MHz
IS = 28A, VGS = 0V
IF = 28A, dl/dt = 100A/µs
Note :
1. Surface mounted FR-4 board by JEDEC (jesd51-7)
2. EAS is tested at starting Tj = 25℃, L = 0.1mH, IAS = 42.0A, VDD = 27V, VGS = 10V
3. T < 10sec.
Min Typ
Max Unit
30 -
1.3 1.8
-
2.7
V
-- 1
- - 5 µA
- - ±0.1
- 2.0 2.4
- 2.9 3.5 mΩ
- 2.7 3.3
- 45 - S
38.8
18.7
-
-
2510
246
490
-
-
-
-
-
51.8
25.0
9.9
9.4
3347
328
653
11.2
23.2
45.6
18.6
1.0
64.8
31.3
-
-
4184
410
817
-
-
-
-
2.0
nC
pF
ns
Ω
- 0.8 1.1 V
-
33.8 50.7
ns
-
22.3 33.5
nC
May. 2011. Version 1.2
2 MagnaChip Semiconductor Ltd.
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50
VGS = 10V
4.0V
40 5.0V
8.0V
30
3.0V
20
10
0
0.0 0.5 1.0 1.5
VDS, Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
2.0
1.8
※ Notes :
1. V = 10 V
1.6
GS
2. ID = 28.0 A
1.4
1.2
1.0
0.8
0.6
-50
-25
0 25 50 75 100 125 150
TJ, Junction Temperature [oC]
Fig.3 On-Resistance Variation with
Temperature
20
※ Notes :
VDS = 5V
16
12
TA=25℃
8
4
0
01234
VGS, Gate-Source Voltage [V]
Fig.5 Transfer Characteristics
5
May. 2011. Version 1.2
3
4
3 VGS = 4.5V
VGS = 10V
2
1
0
10 20 30 40 50
ID, Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
30
※ Notes :
ID = 28.0A
25
20
15
10
5 TA = 25℃
0
2 3 4 5 6 7 8 9 10
VGS, Gate to Source Volatge [V]
Fig.4 On-Resistance Variation with
Gate to Source Voltage
100
10
25℃
1
0.1
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
-VSD [V]
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
MagnaChip Semiconductor Ltd.
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