MDU5693 - Dual N-Channel Trench MOSFET 30V
MDU5693
Dual Asymmetric N-channel Trench MOSFET 30V
General Description
The...
MDU5693 - Dual N-Channel Trench
MOSFET 30V
MDU5693
Dual Asymmetric N-channel Trench
MOSFET 30V
General Description
The MDU5693 uses advanced MagnaChip’s
MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU5693 is suitable for DC/DC converter and general purpose applications.
Features
FET1
FET2
VDS = 30V ID = 52A
VDS = 30V ID = 100A @VGS = 10V
RDS(ON) < 5.0mΩ < 8.5mΩ
< 2.5mΩ @VGS = 10V < 3.2mΩ @VGS = 4.5V
100% UIL Tested
100% Rg Tested
1 2
3 4
S2
5
6
S2 S2
7 8 G2 S1/D2
4
D1 3 D1
2
D1
1
G1
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source
Voltage
Gate-Source
Voltage
Continuous Drain Current (1)
Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2)
TC=25oC (Silicon Limited) TC=25oC (Package Limited) TC=70oC TA=25oC TA=70oC
TC=25oC TA=25oC
Junction and Storage Temperature Range
Symbol VDSS VGSS
ID
IDM PD EAS TJ, Tstg
FET1
F...