MDV1525 – Single N-Channel Trench MOSFET 30V
MDV1525
Single N-channel Trench MOSFET 30V, 24A, 10.1mΩ
General Descripti...
MDV1525 – Single N-Channel Trench
MOSFET 30V
MDV1525
Single N-channel Trench
MOSFET 30V, 24A, 10.1mΩ
General Description
The MDV1525 uses advanced MagnaChip’s
MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDV1525 is suitable for DC/DC converter and general purpose applications.
Features
VDS = 30V ID = 24A @VGS = 10V RDS(ON) < 10.1mΩ @VGS = 10V < 14.0mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested
DD DD
DD DD
D
S SSG
GS SS
PDFN33
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source
Voltage Gate-Source
Voltage
Characteristics
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range
TC=25oC (Silicon limited) TC=25oC (Package limited) TC=70oC TA=25oC TA=70oC
TC=25oC TC=70oC TA=25oC TA=70oC
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case
May. 2011. Version1.2
1
G S
Symbol VDSS VGSS
ID
IDM
PD
EAS TJ, Tstg
Rating
30 ±20 37.2 24 24 13.8(3) 11.1(3) 60 24.5 15.6 3.4(3) 2.2(3) 48 -55~150
Unit V V
A
A
W
mJ oC
Symbol RθJA RθJC
Rating 36 5.1
Unit oC/W
MagnaChip Semiconductor Ltd.
MDV1525 – Single N-Channel Trench
MOSFET 30V
Ordering Information
Part Number MDV1525URH
Temp. Range -55~150oC
Package PowerDFN33
Packing Tape & Reel
Quantity 5000 units
Rohs Status Halogen Free
Electrical Characteristics (TJ = 25oC)
Characteristics S...