| Part Number | ME2303 |
| Manufacturer | Matsuki |
| Title | P-Channel 30V (D-S) MOSFET |
| Description | The ME2303 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. T... |
| Features |
● RDS(ON) ≦75mΩ@VGS=-10V ● RDS(ON) ≦100mΩ@VGS=-4.5V ● Super high density cell design for extremely low RDS(ON) APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● Load Switch ● DSC * The Ordering Information: ME2303 (Pb-free) ME2303-G (Green product-Halogen ... |
| Datasheet | ME2303 pdf datasheet |
| Part Number | ME2309-G |
| Manufacturer | Matsuki |
| Title | P-Channel 60V (D-S) MOSFET |
| Description | The ME2309 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. Th. |
| Features |
● RDS(ON)≦215mΩ@VGS=-10V ● RDS(ON)≦260mΩ@VGS=-4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● DC/DC Converter ● Load Switch ● DSC. |
| Datasheet | ME2309-G pdf datasheet |
| Part Number | ME2309 |
| Manufacturer | Matsuki |
| Title | P-Channel 60V (D-S) MOSFET |
| Description | The ME2309 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. Th. |
| Features |
● RDS(ON)≦215mΩ@VGS=-10V ● RDS(ON)≦260mΩ@VGS=-4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● DC/DC Converter ● Load Switch ● DSC. |
| Datasheet | ME2309 pdf datasheet |
| Part Number | ME2308S-G |
| Manufacturer | Matsuki |
| Title | N-Channel 60V (D-S) MOSFET |
| Description | The ME2308S is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. T. |
| Features |
● RDS(ON) ≦100mΩ@VGS=10V ● RDS(ON) ≦130mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● DC/DC Converter ● Load Switch ● LCD Display inverter PIN CO. |
| Datasheet | ME2308S-G pdf datasheet |
| Part Number | ME2308S |
| Manufacturer | Matsuki |
| Title | N-Channel 60V (D-S) MOSFET |
| Description | The ME2308S is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. T. |
| Features |
● RDS(ON) ≦100mΩ@VGS=10V ● RDS(ON) ≦130mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● DC/DC Converter ● Load Switch ● LCD Display inverter PIN CO. |
| Datasheet | ME2308S pdf datasheet |
| Part Number | ME2308D-G |
| Manufacturer | Matsuki |
| Title | N-Channel 30V (D-S) MOSFET |
| Description | The ME2308D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. T. |
| Features |
● RDS(ON)≦60mΩ@VGS=10V ● RDS(ON)≦70mΩ@VGS=4.5V ● RDS(ON)≦100mΩ@VGS=2.5V ● ESD Protection ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Load Switch ● DSC * T. |
| Datasheet | ME2308D-G pdf datasheet |
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