ME2345

P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION The ME2345 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOT-23) Top View ME2345(-G) FEATURES ● RDS(ON) ≦65mΩ@VGS=-10V ● RDS(ON) ≦75mΩ@VGS=-4.5V ● RDS(ON) ≦105mΩ@VGS=-2.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● Load Switch ● DSC e Ordering Information: ME2345 (Pb-free) ME2345-G (Green product-Halogen free) (Green Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(Tj=150℃)* Pulsed Drain Current Maximum Power Dissipation* Operating Junction Temperature TA=25℃ TA=70℃ TA=25℃ TA=70℃ Thermal Resistance-Junction to Ambient* Symbol VDSS VGSS ID IDM PD TJ RθJA Limit -30 ±12 -3.65 -2.9 -15 1.4 0.9 -55 to 150 T≦10 sec 90 Steady State 120 Unit V V A A W ℃ ℃/W e * The device mounted on 1in2 FR4 board with 2 ...