P-Channel 30V (D-S) MOSFET
ME2345A/ME2345A-G
GENERAL DESCRIPTION
The ME2345A is the P-Channel logic enhancement mode p...
P-Channel 30V (D-S)
MOSFET
ME2345A/ME2345A-G
GENERAL DESCRIPTION
The ME2345A is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low
voltage application such as cellular phone and notebook computer power management and other battery powered circuits where switching and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(SOT-23) Top View
FEATURES
● RDS(ON) ≦68mΩ@VGS=-10V
● RDS(ON) ≦80mΩ@VGS=-4.5V
● RDS(ON) ≦100mΩ@VGS=-2.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book ● Portable Equipment ● Battery Powered System ● Load Switch ● DSC
e Ordering Information: ME2345A (Pb-free)
ME2345A-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter Drain-Source
Voltage Gate-Source
Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction Temperature
TA=25℃ TA=70℃
TA=25℃ TA=70℃
Thermal Resistance-Junction to Ambient*
Symbol VDS VGS
ID
IDM
PD
TJ RθJA
Maximum Ratings
-30 ±12 -3.6 -2.9 -14 1.4 0.9 -55 to 150
90
*The device mounted on 1in2 FR4 board with 2 oz copper
Unit V V
A
A
W
℃ ℃/W
Jun, 2012-Ver4.4
01
ME2345A/ME2345A-G
P-Chan...