| Part Number | ME2N7002W |
| Manufacturer | Matsuki |
| Title | N-Channel MOSFET |
| Description | The ME2N7002W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology... |
| Features |
● Simple Drive Requirement ● Small Package Outline ● ROHS Compliant Mechanical data ● High density cell design for low RDS(ON) ● Voltage controlled small signal switching. ● Rugged and reliable. ● High saturation current capability. ● High-speed switching. ● Not thermal runaway. ● The soldering temp... |
| Datasheet | ME2N7002W pdf datasheet |
| Part Number | ME2N7002KW |
| Manufacturer | Matsuki |
| Title | Dual N-Channel MOSFET |
| Description | FEATURES The ME2N7002KW is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS t. |
| Features |
The ME2N7002KW is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applicatio. |
| Datasheet | ME2N7002KW pdf datasheet |
| Part Number | ME2N7002F1W-G |
| Manufacturer | Matsuki |
| Title | N-Channel MOSFET |
| Description | The ME2N7002F1W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technolo. |
| Features |
● RDS(ON)≦8Ω@VGS=4V ● RDS(ON)≦13Ω@VGS=2.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter (SOT-323) Top View Ordering Inform. |
| Datasheet | ME2N7002F1W-G pdf datasheet |
| Part Number | ME2N7002F1W |
| Manufacturer | Matsuki |
| Title | N-Channel MOSFET |
| Description | The ME2N7002F1W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technolo. |
| Features |
● RDS(ON)≦8Ω@VGS=4V ● RDS(ON)≦13Ω@VGS=2.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter (SOT-323) Top View Ordering Inform. |
| Datasheet | ME2N7002F1W pdf datasheet |
| Part Number | ME2N7002F1KW-G |
| Manufacturer | Matsuki |
| Title | Dual N-Channel MOSFET |
| Description | The ME2N7002F1KW is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench te. |
| Features |
● RDS(ON)≦8Ω@VGS=4V ● RDS(ON)≦13Ω@VGS=2.5V ● ESD Protection HBM 1KV ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter (SOT-363) . |
| Datasheet | ME2N7002F1KW-G pdf datasheet |
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