| Part Number | ME35N06 |
| Manufacturer | Matsuki |
| Title | N-Channel 60V (D-S) MOSFET |
| Description | The ME35N06-G is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high d... |
| Features |
● RDS(ON)≦32mΩ@VGS=10V ● RDS(ON)≦40mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter (TO-252-3L) Top View The Order... |
| Datasheet | ME35N06 pdf datasheet |
| Part Number | ME35N06T-G |
| Manufacturer | Matsuki |
| Title | N-Channel 60V (D-S) MOSFET |
| Description | The ME35N06T is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high de. |
| Features |
● RDS(ON)≦32mΩ@VGS=10V ● RDS(ON)≦40mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter e Ordering Information: ME35N06. |
| Datasheet | ME35N06T-G pdf datasheet |
| Part Number | ME35N06T |
| Manufacturer | Matsuki |
| Title | N-Channel 60V (D-S) MOSFET |
| Description | The ME35N06T is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high de. |
| Features |
● RDS(ON)≦32mΩ@VGS=10V ● RDS(ON)≦40mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter e Ordering Information: ME35N06. |
| Datasheet | ME35N06T pdf datasheet |
| Part Number | ME35N06P-G |
| Manufacturer | Matsuki |
| Title | N-Channel 60V (D-S) MOSFET |
| Description | The ME35N06P is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high de. |
| Features |
● RDS(ON)≦32mΩ@VGS=10V ● RDS(ON)≦40mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter Ordering Information: ME35N06P . |
| Datasheet | ME35N06P-G pdf datasheet |
| Part Number | ME35N06P |
| Manufacturer | Matsuki |
| Title | N-Channel 60V (D-S) MOSFET |
| Description | The ME35N06P is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high de. |
| Features |
● RDS(ON)≦32mΩ@VGS=10V ● RDS(ON)≦40mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter Ordering Information: ME35N06P . |
| Datasheet | ME35N06P pdf datasheet |
| Part Number | ME35N06F-G |
| Manufacturer | Matsuki |
| Title | N-Channel 60V (D-S) MOSFET |
| Description | The ME35N06F is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high de. |
| Features |
● RDS(ON)≦32mΩ@VGS=10V ● RDS(ON)≦40mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter (TO-220F) Top View * The Order. |
| Datasheet | ME35N06F-G pdf datasheet |
Since 2024. D4U Semiconductor.
|
Contact Us
|
Privacy Policy