ME4456

N-Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION The ME4456 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION ME4456/ME4456-G FEATURES ● RDS(ON)≦24mΩ@VGS=10V ● RDS(ON)≦39mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Battery Powered System ● DC/DC Converter ● Load Switch (SOP-8) Top View e Ordering Information: ME4456 (Pb-free) ME4456-G (Green product- Halogen free) Absolute Ma...