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ME4542 Datasheet

Part Number ME4542
Manufacturers Matsuki
Logo Matsuki
Description N- and P-Channel 30-V (D-S) MOSFET
Datasheet ME4542 DatasheetME4542 Datasheet (PDF)

www.DataSheet4U.com ME4542 N- and P-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION The ME4542 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side swi.

  ME4542   ME4542






Part Number ME4548-G
Manufacturers Matsuki
Logo Matsuki
Description Dual N- & P-Channel MOSFET
Datasheet ME4542 DatasheetME4548-G Datasheet (PDF)

Dual N- and P-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION The ME4548 is the dual N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-.

  ME4542   ME4542







Part Number ME4548
Manufacturers Matsuki
Logo Matsuki
Description Dual N- & P-Channel MOSFET
Datasheet ME4542 DatasheetME4548 Datasheet (PDF)

Dual N- and P-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION The ME4548 is the dual N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-.

  ME4542   ME4542







Part Number ME4544D-G
Manufacturers Matsuki
Logo Matsuki
Description N- & P-Channel MOSFET
Datasheet ME4542 DatasheetME4544D-G Datasheet (PDF)

ME4544D/ME4544D-G N- and P-Channel 30-V (D-S) MOSFET , ESD Protection GENERAL DESCRIPTION The ME4544D is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high.

  ME4542   ME4542







Part Number ME4544D
Manufacturers Matsuki
Logo Matsuki
Description N- & P-Channel MOSFET
Datasheet ME4542 DatasheetME4544D Datasheet (PDF)

ME4544D/ME4544D-G N- and P-Channel 30-V (D-S) MOSFET , ESD Protection GENERAL DESCRIPTION The ME4544D is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high.

  ME4542   ME4542







Part Number ME4544-G
Manufacturers Matsuki
Logo Matsuki
Description N- & P-Channel MOSFET
Datasheet ME4542 DatasheetME4544-G Datasheet (PDF)

N- and P-Channel 30-V (D-S) MOSFET ME4544/ ME4544-G GENERAL DESCRIPTION The ME4544 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, an.

  ME4542   ME4542







N- and P-Channel 30-V (D-S) MOSFET

www.DataSheet4U.com ME4542 N- and P-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION The ME4542 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. FEATURES ● 30V/6.9A,RDS(ON)=25mΩ@VGS=10V (N-Ch) ● 30V/5.8A,RDS(ON)=40mΩ@VGS=4.5V (N-Ch) ● -30V/-6.1A,RDS(ON)=35mΩ@VGS=-10V (P-Ch) ● -30V/-5.1A, RDS(ON)=58mΩ@ VGS=-4.5V (P-Ch) ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● DC/DC Converter ● Load Switch ● DSC PIN CONFIGURATION (SOP-8) Top View Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(tJ=150℃) Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Energy with Single Pulse Maximum Power Dissipation Operating Junction Temperature Thermal Resistance-Junction to Ambient* Thermal Resistance-Junction to Case *The device mounted on 1in2 FR4 board with 2 oz copper Symbol VDS.


2010-05-05 : LC300W01    LM190WX1    MC68331    ME4542    miniSMDC020    NTA4001N    NTA4151P    PA44-QP    OTQ    OTQ-32-0.8-02   


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