MOSFET. ME4566 Datasheet

ME4566 Datasheet PDF


Part ME4566
Description N- & P-Channel MOSFET
Feature N- and P-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION The ME4566 is the N- and P-Channel logic enha.
Manufacture Matsuki
Datasheet
Download ME4566 Datasheet


N- and P-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION The M ME4566 Datasheet
N- and P-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION The M ME4566-G Datasheet




ME4566
N- and P-Channel 60-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME4566 is the N- and P-Channel logic enhancement mode
power field effect transistors are produced using high cell density ,
DMOS trench technology. This high density process is especially
tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as cellular phone
and notebook computer power management and other battery
powered circuits where high-side switching, and low in-line power
loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(SOP-8)
Top View
ME4566/ME4566-G
FEATURES
RDS(ON)34mΩ@VGS=10V (N-Ch)
RDS(ON)42mΩ@VGS=4.5V (N-Ch)
RDS(ON)66mΩ@VGS=-10V (P-Ch)
RDS(ON)86mΩ@VGS=-4.5V (P-Ch)
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management
DC/DC Converter
LCD TV & Monitor Display inverter
CCFL inverter
LCD Display inverter
* The Ordering Information: ME4566 (Pb-free)
ME4566-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA=25
TA=70
Pulsed Drain Current
Maximum Power Dissipation
TA=25
TA=70
Junction and Storage Temperature Range
Thermal Resistance-Junction to Ambient *
Symbol
VDS
VGS
ID
IDM
PD
TJ, Tstg
RθJA
N-Channel
60
P-Channel
-60
±20 ±20
6.1 -4.4
4.9 -3.5
24 -17
22
1.3 1.3
-55 to 150
62.5 62.5
Unit
V
A
W
/W
*The device mounted on 1in2 FR4 board with 2 oz copper
DCC
正式發行
May, 2015-Ver1.0
01



ME4566
ME4566/ME4566-G
N- and P-Channel 60-V (D-S) MOSFET
Electrical Characteristics (Tj =25Unless Otherwise Specified)
Symbol Parameter
Conditions
Min Typ Max Unit
STATIC
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
VGS=0V, ID=250μA
VGS=0V, ID=-250μA
VDS=VGS, ID=250μA
VDS=VGS, ID=-250μA
N-Ch
P-Ch
N-Ch
P-Ch
60
-60
1
-1
V
2.5
-2.5
V
IGSS Gate Leakage Current
VDS=0V, VGS=±20V
VDS=0V, VGS=±20V
N-Ch
P-Ch
±100
±100
nA
IDSS
Zero Gate Voltage Drain Current
VDS=60V, VGS=0V
VDS=-60V, VGS=0V
N-Ch
P-Ch
1
-1
μA
RDS(ON)
Drain-Source On-State Resistancea
VGS=10V, ID= 4A
VGS=-10V, ID= -2A
VGS=4.5V, ID= 2A
VGS=-4.5V, ID= -1A
N-Ch
P-Ch
N-Ch
P-Ch
28 34
55 66
mΩ
32 42
66 86
VSD Diode Forward Voltage
IS=1.7A, VGS=0V
IS=-1.7A, VGS=0V
N-Ch
P-Ch
0.74 1.1
-0.78 -1.1
V
DYNAMIC
Qg Total Gate Charge
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
N-Channel
VDS=30V, VGS=10V, ID=4A
P-Channel
VDS=-30V, VGS=-10V, ID=-2A
N-Channell
VDS=30V, VGS= 5V, ID=4A
P-Channel
VDS=-30V, VGS=-4.5V,ID=-2A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
21.4
23.2
13.2
11.3
3.1
4.7
4.9
4.5
Ciss Input Capacitance
N-Channel
N-Ch
P-Ch
636
725
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
VDS=15V, VGS=0V, f=1MHz
P-Channel
VDS=-15V, VGS=0V, f=1MHz
N-Ch
P-Ch
N-Ch
P-Ch
90
73
54
54
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
N-Channel
VDD=30V, RL =30Ω
ID=1A, VGS=10V, RG=1Ω
P-Channel
VDD=-30V, RL =30Ω
ID=-1A, VGS=-10V,RG=3Ω
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
11.2
30.2
11
8.6
24.9
56.2
3.2
6.6
Notes: a. Pulse test: pulse width300us, duty cycle2%, Guaranteed by design, not subject to production testing.
nC
pF
ns
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
DCC
正式發行
May, 2015-Ver1.0
02






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