ME4952-G

Dual N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION The ME4952 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOP-8) Top View ME4952/ME4952-G FEATURES ● RDS(ON)≦270mΩ@VGS=10V ● RDS(ON)≦295mΩ@VGS=6.0V ● RDS(ON)≦350mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● DC/DC Converter ● Load Switch ● LCD Display inverter e Or...