ME70N03

www.DataSheet4U.com 30V N-Channel Enhancement Mode MOSFET V DS =30V R DS(ON) ,Vgs@10V,Ids@45A=6 m Ù R DS(ON) ,[email protected],Ids@30A=10 m Ù FEATURES Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Specially Designed for DC/DC Converters and Motor Drivers Fully Characterized Avalanche Voltage and Current TO-252(D-PAK) Top View G D S mi Gate Absolute Maximum Ratings (TA=25 Parameter Drain-Source Voltage Gate-Source Voltage Pulsed Drain Symbol V DS ID V GS I DM PD TJ na Drain INTERNAL SCHEMATIC DIAGRAM Unless Otherwise Noted) Limit 30 20 60 350 70 42 -55 to 150 300 1.8 40 mJ eli Current 1) T stg E AS R R JC JA Continuous Drain Current T A=25 T A=100 Operating Junction Temperature Storage Temperature Range Maximum Power Dissipation Avalanche Energy with Single Pulse I D = 50A,VDD= 25V, L= 0.5mH Pr Jul,2005-Ver1.0 Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance (PCB mounted) 2) Note:1.Maximum DC current limited by the package 2 2.1-in 2oz Cu PCB board ry Source ME70N03 Pb Free Product Unit V A W /W 01 30V N-Channel Enhancement Mode MOSFET Electrical Characteristics (T J =25 Symbol STATIC BVDSS RDS(ON) VGS(th) IDSS IGSS Rg gfs Qg Qgs Qgd Td(on) tr Td(off) tf Ciss Coss Crss Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate Resistance Forward Transconductance Total Gate Charge Gate-Source Charge Gate-Drain ...